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FPM2750QFN
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
FEATURES:
* * * * * * * Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical (3.0V) Combined IP3: 36dBm (100mA) Combined P1dB: 23dBm (100mA) Small footprint: 4mm x 4mm x 0.9mm QFN RoHS compliant: (Directive 2002/95/EC)
Datasheet v2.5
PACKAGE:
GENERAL DESCRIPTION:
The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation.
TYPICAL APPLICATIONS:
*
* Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
Noise Figure
SYMBOL
NF
CONDITIONS
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA
MIN
TYP
0.4 0.6 32
MAX
UNITS
dB
Output IP3 in balanced mode SSG in balanced mode
IP3
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 33
dBm
36 18.5 dB
SSG
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 17.5
20 21 dBm
P1dB in balanced mode
P1dB
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 21.5
23.5 19.0 19.5 17.5 17.5 dBm dB
Small Signal Gain
SSG
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA
Power at 1dB Gain Compression
P1dB
VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| JC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.75 mA IGS = 0.75 mA IGD = 0.75 mA 1W dissipation, case temperature 22C
185
230 375 200 5
280
mA mA mS A
0.7
1.0 16 16 124
1.3
V V V C/W
Note: TAMBIENT = 22; RF specification measured at f= 1850MHz using CW signal (except as noted). 1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
ABSOLUTE MAXIMUM RATING (PER TRANSISTOR) :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power (Note 2) Channel Operating Temperature Storage Temperature Total Power Dissipation (Note 3) Gain Compression
1
SYMBOL
VDS VGS IDS IG PIN TCH TSTG PTOT Comp.
TEST CONDITIONS
ABSOLUTE MAXIMUM
6V -3V
For VDS < 2V Forward or reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions
IDSS 7.5mA 150mW 175C -55C to 150C 1W 5dB
Notes: 1. 2. 3.
4. 5.
TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device RF Input must be further limited if input VSWR > 2.5:1 Total Power Dissipation is defined as: PTOT = PDC + PIN - POUT where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power Total Power Dissipation shall be de-rated above 22C as follows: PTOT = (150 - TCASE ) / JC W where TCASE = Temperature of the thermal pad on the underside of the package JC increases linearly from 124C/W at a TCASE of 22C to 145C/W at a TCASE of 145C Information on the mounting of QFN style packages for optimum thermal performance is available on request.
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices used in the FPM2750QFN Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 4 for a 50% of IDSS operating point. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% offers an optimised solution for NF and OIP3.
* * *
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
REFERENCE DESIGN 1850MHZ (BALANCED OPERATION):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
DESIGNATOR
C1, C2, C3, C4 C5, C6, C7, C8, C9, C17 C10, C18, C19, C20 C11, C12, C13, C14, C15, C16 C25, C26, C27, C29 L1, L2, L3, L4 Q2 R1, R2 R3, R4, R5, R6 W1, W2 RF1, RF2 (V1, V2) Evaluation board
SUPPLIER
RS Components RS Components RS Components RS Components RS Components RS Components FILTRONIC RS Components RS Components ANAREN RS Components RS Components FILTRONIC
PART NUMBER
464-6587 464-6385 264-4602 464-6543 406-0006 484-1372 FPM2750QFN 213-2042 213-2143 1P503 363-4707 453-173 EBD15PA
DESCRIPTION
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR CAP-10pF-0603-5%-50V-COG CAP-22nF-0603-10%-50V CAP-47nF-0603-+80/-20%-50V-Y5V CAP-1uF-CASEB-20%-35V-TANT IND-12nH-2012(0805)-5%-600mA-HQ Dual FPD750-QFN4x4 RESIST-22ohm-1608(0603)-1%-0.1W RESIST-100ohm-1608(0603)-1%-0.1W HYBRID COUPLER SMA Side Mount RF Connector DC Connector (4 way) 31mil thick FR4 1/2 Ounce Cu on both sides
QUANTITY
4 6 4 6 4 4 1 2 4 2 2 2 1
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
REFERENCE DESIGN 1850MHZ (SINGLE ENDED OPERATION):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
DESIGNATOR
C1, C2, C3, C4 C5, C6, C7, C8, C9, C17 C10, C18, C19, C20 C11, C12, C13, C14, C15, C16 C25, C26, C27, C29 L1, L2, L3, L4 Q2 R1, R2 RF1, RF2, RF3, RF4 (V1, V2) Evaluation board
SUPPLIER
RS Components RS Components RS Components RS Components RS Components RS Components FILTRONIC RS Components RS Components RS Components FILTRONIC
PART NUMBER
464-6587 464-6385 264-4602 464-6543 406-0006 484-1372 FPM2750QFN 213-2042 363-4707 453-173 EBD12PA
DESCRIPTION
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR CAP-10pF-0603-5%-50V-COG CAP-22nF-0603-10%-50V CAP-47nF-0603-+80/-20%-50V-Y5V CAP-1uF-CASEB-20%-35V-TANT IND-12nH-2012(0805)-5%-600mA-HQ Dual FPD750-QFN4x4 RESIST-22ohm-1608(0603)-1%-0.1W SMA Side Mount RF Connector DC Connector (4 way) 31mil thick FR4 1/2 Ounce Cu on both sides
QUANTITY
4 6 4 6 4 4 1 2 4 2 1
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: BALANCED OPERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50 environment and TA = +22 C unless stated otherwise. All measurements shown are referenced to evaluation board connectors.
0.9 0.8 Input Return Loss (dB) 1.70 1.75 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 0.7 0.6 NF (dB) 0.5 0.4 0.3 0.2 0.1 0.0 -50 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 -10 -20 -30 -40 0
0 Output Return Loss (dB) -10 -20 -30 -40 -50 -60 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 Gain (dB)
21 20 19 18 17 16 15 14 13 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 '-40 C' '20 C' '80 C'
24 23 Output P1dB (dBm) Output IP3 (dBm) 22 21 20 19 18 17 16 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 '-40 C' '20 C' '80 C'
38 36 34 32 30 28 26 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 '-40 C' '20 C' '80 C'
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: SINGLE ENDED OPERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50 environment and TA = +22 C unless stated otherwise. All measurements shown are referenced to evaluation board connectors.
0.9 0.8 Input Return Loss (dB) 1.70 1.75 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 0.7 0.6 NF (dB) 0.5 0.4 0.3 0.2 0.1 0.0 0 -2 -4 -6 -8 -10 -12 -14 -16 1.0 2.0 3.0 Freq (GHz) 4.0 5.0
0 Output Return Loss (dB) -10 Gain (dB) 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 -20 -30 -40 -50
30 25 20 15 10 5 0 -5 -10 1.0 2.0 3.0 Freq (GHz) 4.0 5.0
21 20 Output P1dB (dBm) 19 18 17 16 15 14 13 12 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 Output IP3 (dBm)
32 31 30 29 28 27 26 25 24 1.80 1.85 1.90 Freq (GHz) 1.95 2.00
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL SMALL SIGNAL MAGNITUDE DIFFERENCE WITHIN A SINGLE PACKAGE:
400 500 300 Count Count 0.0 0.1 0.2 0.3 0.4 |S11_ChA(mag) - S11_ChB(mag)| 0.5 400 300 200 100 100 0 0 0.0 0.1 0.2 0.3 0.4 |S22_ChA(mag) - S22_ChB(mag)| 0.5
200
400
300 Count Count -4 -2 0 2 S21_ChA(dB) - S21_ChB(dB) 4
300
200
200
100
100
0
0 -4 -2 0 2 S12_ChA(dB) - S12_ChB(dB) 4
The histograms above represent the distribution of the asymmetry of RF parameters for the devices within a package. ChA and ChB are the two devices within the same package. The sample size for the histograms above is 1000 parts. PARAMETER
|S11ChA(mag) - S11ChB(mag)| |S22ChA(mag) - S22ChB(mag)| S21ChA(dB) - S21ChB(dB) S12ChA(dB) - S12ChB(dB)
MEDIAN
0.0001 0.0001 0.006 -0.128
STANDARD DEVIATION
0.027 0.019 0.408 0.205
TEST LIMIT
0.1 0.1 0.75 0.75
CPK
1.3 1.7 0.68 1.43
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
PACKAGE OUTLINE:
(dimensions in millimeters - mm, centre paddle and pin 1 identifier are grounded)
TERMINAL
1-4, 6, 15 5 7, 9-12, 14 8 13 16
FUNCTION
Source 1 RFin 1 Source 2 RFin 2 RFout 2 RFout 1
PREFERRED ASSEMBLY INSTRUCTIONS:
Please contact Filtronic Compound Semiconductors Ltd for further details.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION:
PART NUMBER
FPM2750QFN EB-FPM2750QFN-BAL
DESCRIPTION
Packaged pHEMT Balanced Packaged pHEMT evaluation board
EB-FPM2750QFN-SE
Single-ended Packaged pHEMT evaluation board
8
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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